![]() A good correlation between ohmic transfer length and the micro-pattern size is revealed, though in-depth investigation is needed. The extracted Schottky barrier height and electron concentration are 0.31 eV and 5.52 × 10 18 cm −3, which suggests an intimate contact between ohmic metal and the UTB-AlGaN as well as GaN buffer. The contact mechanism can be well described by thermionic field emission (TFE). The sheet resistances increase with the temperature following a power law with the index of +2.58, while the specific contact resistivity decreases with the temperature. Key words: ultrathin-barrier AlGaN/GaN heterostructure, low thermal budget, Au-free ohmic contact, micro-patterned ohmic recess, MIS-HEMTs, transfer lengthĪ pre-ohmic micro-patterned recess process, is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier (UTB) AlGaN/GaN heterostructure, featuring a significantly reduced ohmic contact resistivity of 0.56 Ω A preliminary CMOS-process-compatible metal–insulator–semiconductor high-mobility transistor (MIS-HEMT) was fabricated with the proposed Au-free ohmic contact technique. Abstract: A pre-ohmic micro-patterned recess process, is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier (UTB) AlGaN/GaN heterostructure, featuring a significantly reduced ohmic contact resistivity of 0.56 Ω
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